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Plasma-enhanced chemical vapour deposition of silicon nitride from SiCl4, nitrogen and hydrogen on hard metals

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Abstract

Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline.

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References

  1. R. S. ROSLER,Solid State Technol. 22 (1979) 88.

    CAS  Google Scholar 

  2. Y. RON, A. RAVEH, U. CARMI, A INSPEKTOR and R. AVNI,Thin Solid Films 107 (1983) 181.

    Article  CAS  ADS  Google Scholar 

  3. M. FUKUTOMI, M. KITAJIMA, M OKADA and R. WATANABE,J. Electrochem. Soc. 124 (1977) 1420.

    Article  CAS  Google Scholar 

  4. K KIJIMA, N. SETAKA and H. TANAKA,J. Crystal Growth 24/25 (1974) 183.

    Article  Google Scholar 

  5. W. SCHINTLMEISTER, W. WALLGRAM and K. GIGL, in “Proceedings of the 11th International Plansee Seminar 1985”, Reutte, Tirol, Austria, 1985, edited by H. Bildstein, H. M. Ortner (Metallwerk Plansee, GMBH, 1985), Vol. 2, p.299.

    Google Scholar 

  6. A LEONHARDT, Z Arbeitstagungder Chemischen Gasellochaft der DDR, Arbeitsgemeinschaft Festkörchemie, Bad Schandan, 1984, in Wiss. Berichte Zentralinstitut für Festkörperphysik und Werkstofforschung Dresden, no. 28, 1984, p. 17.

  7. H. H SAWIN,Solid State Technol. 28 (1985) 211.

    Article  CAS  ADS  Google Scholar 

  8. T. L CHU, C. H. LEE and B. A. GRUBER,J. Electrochem. Soc. 114 (1967) 717.

    Article  CAS  Google Scholar 

  9. C GRESKOVICH and G E GAZZA,J. Mater. Sci Lett. 4 (1985) 195.

    Article  CAS  Google Scholar 

  10. K. NIIHARA and T. HIRAI,J. Mater. Sci. 12 (1977) 1243.

    Article  CAS  ADS  Google Scholar 

  11. D SCHALCH, A SCHARMANN and R WOLFRAT,Thin Solid Films 124 (1985) 301.

    Article  CAS  ADS  Google Scholar 

  12. D SCHALCH, A SCHARMANN and R WOLFRAT, Ibid.155 (1987) 301.

    Article  CAS  ADS  Google Scholar 

  13. N WADA, S A SOLIN, J. WONG and S PROCHAZKA,J. Non-Cryst. Solids 43 (1981) 7.

    Article  CAS  ADS  Google Scholar 

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Endler, I., Leonhardt, A., Schönherr, M. et al. Plasma-enhanced chemical vapour deposition of silicon nitride from SiCl4, nitrogen and hydrogen on hard metals. J Mater Sci 26, 782–786 (1991). https://doi.org/10.1007/BF03163522

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  • DOI: https://doi.org/10.1007/BF03163522

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