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Effect of molecular motion on electron spin phase memory times for copper(II) complexes in doped solids

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Abstract

Electron spin phase memory times,T m, as a function of temperature were measured for Cu(II) bis(diethyldithiocarbamate), Cu(Et2dtc)2; Cu(II) bis(diethyldithiophosphate), Cu(Et2dtp)2; Cu(II) bis(diphenyldithiophosphate), Cu(Ph2dtp)2; Cu(II) tetratolylporphyrin, CuTTP; vanadyl 5-(4-carboxyphenyl)-10,15,20-tritolylporphyrin, VOTTP-COOH; and Ag(II) tetratolylporphyrin, AgTTP, doped into powdered samples of closely-related diamagnetic hosts. For the three metalloporphyrins, the electron spin relaxation rate (1/T m) increased monotonically with increasing temperature. However the temperature dependence of the relaxation rate was not monotonic for the three other Cu(II) complexes. For Cu(Et2dtc)2 and Cu(Et2dtp)2 the temperature dependence of 1/T m between about 85 and 130 K is attributed to the effects of methyl rotation, with activation energies of 1.0 kcal/mole. Between 120 and 250 K the 1/T m data for Cu(Ph2dtp)2 exhibit effects that are attributed to motion of the phenyl rings.

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  1. Department of Chemistry, University of Denver, 80208, Denver, Colorado, USA

    J. -L. Du, G. R. Eaton & S. S. Eaton

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  1. J. -L. Du
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  2. G. R. Eaton
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  3. S. S. Eaton
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Du, J.L., Eaton, G.R. & Eaton, S.S. Effect of molecular motion on electron spin phase memory times for copper(II) complexes in doped solids. Appl. Magn. Reson. 6, 373–378 (1994). https://doi.org/10.1007/BF03162630

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  • DOI: https://doi.org/10.1007/BF03162630

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