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EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy

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Abstract

We have performed X-band ESR measurements on InP:Er epitaxial layers grown by organometallic vapor phase epitaxy, which were grown at the substrate temperatures of 530°C (sample A) and 580°C (sample B). Sample A shows a slightly anisotropic resonance aroundg = 6 with hyperfine structure due to the167Er (I = 7/2) isotope at 3 K. This result is similar to the result for Erdoped bulk InP and it indicates that Er3+ ions are located in In tetrahedral sites. On the other hand, we do not see such a resonance for sample B, suggesting that the local symmetry of Er in sample B is different from sample A. The difference between samples A and B is consistent with the fluorescence-detected extended X-ray absorption fine structure results that the coordination number of Er depends on the growth temperature.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Kobe University, Kobe, Japan

    C. Urakawa, Y. Nakashima & H. Ohta

  2. Venture Business Laboratory, Kobe University, Kobe, Japan

    C. Urakawa, Y. Nakashima & H. Ohta

  3. Graduate School of Engineering, Nagoya University, Nagoya, Japan

    T. Ito, Y. Fujiwara & Y. Takeda

Authors
  1. C. Urakawa
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  2. Y. Nakashima
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  3. H. Ohta
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  4. T. Ito
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  5. Y. Fujiwara
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  6. Y. Takeda
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Urakawa, C., Nakashima, Y., Ohta, H. et al. EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy. Appl. Magn. Reson. 19, 3–7 (2000). https://doi.org/10.1007/BF03162256

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  • DOI: https://doi.org/10.1007/BF03162256

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