Abstract
The principles of characterization techniques for semiconductor devices based on infrared laser interferometry are reviewed. Transient optical signals due to plasma-and thermo-optical effects are studied by experiment and numerical modeling, providing information on carrier concentration and lattice temperature in the device. The applicability of the techniques is demonstrated on smart power devices, VDMOSFETs, IGBTs and on sub-micron technology MOS- and bipolar transistors.
Zusammenfassung
In dieser Arbeit werden die Grundlagen der Infrarot-Laserinterferometrie beschrieben und deren Anwendung zur Charakterisierung von Halbleiterbauelementen vorgestellt. Zeitabhängige optische Signale, die durch den plasmaoptischen und thermooptischen Effekt hervorgerufen werden, geben mit Unterstützung numerischer Modellierung Information über Ladungsträgerdichten und Temperatur in den Bauelementen. Die Anwendbarkeit der Technik wird beispielhaft an VDMOSFETs, IGBTs, Smart Power-Bauelementen und an submicron MOS- und Bipolartransistoren demonstriert.
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Seliger, N., Gornik, E., Fürböck, C. et al. Characterization of semiconductor devices by infrared laser interferometry. Elektrotech. Inftech. 115, 403–410 (1998). https://doi.org/10.1007/BF03159611
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DOI: https://doi.org/10.1007/BF03159611
Keywords
- infrared
- interferometry
- plasmaoptical effect
- thermooptical effect
- self-heating
- numerical modeling
- smart power technology
- VDMOSFET
- IGBT
- submicron MOS- and bipolar transistor