Abstract
The role of the point-defect scattering relaxation rate has been studied in the lattice thermal conductivity of an insulator by calculating the lattice thermal conductivity of GaAs for the different values of the point-defect scattering strength. All calculations have been performed in the frame of the recently proposed model ofDubey andMisho of the phonon conductivity of an insulator. The study is made for low as well as high values of the point-defect scattering strength in the entire temperature range 4–100 K.
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Al-Edani, M.C., Dubey, K.S. Role of point-defect scattering in the lattice thermal conductivity of an insulator: Application to GaAs. Acta Physica 46, 177–183 (1979). https://doi.org/10.1007/BF03159429
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DOI: https://doi.org/10.1007/BF03159429