Skip to main content
Log in

Magnetoresistivity ofn-type GaAs single crystals in the impurity scattering range

  • Communicationes Breves
  • Published:
Acta Physica Academiae Scientiarum Hungaricae

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. J. T. Edmond, R. F. Broom andF. A. Cunnel in Rept. Meeting on Semiconductors, p. 109, Rugby, 1956.

  2. О. В. Емельяненко, Д. Н, Наследов, жтф,28, 1117 1958.

    Google Scholar 

  3. M. Glicksman, J. Phys. Chem. Sol.,8, 511, 1959.

    Article  ADS  Google Scholar 

  4. H. Ehrenreich, Phys. Rev.,120, 1951, 1960.

    Article  ADS  Google Scholar 

  5. D. Fritsch andH. Weiss in Semiconductors and Semimetals Vol. 1. p. 373. Ed. R. K. Willardson, 1966.

  6. A. F. Kravchenko andH. Y. Fan, Proc. Int. Conf. Semiconductors, p. 737. Exeter, 1962.

  7. A. F. Kravchenko andV. S. Sardaryan, phys. stat. sol.,17, 479, 1966.

    Article  Google Scholar 

  8. R. K. Willardson andJ. J. Duga, Proc. Phys. Soc.,75, 280, 1960.

    Article  Google Scholar 

  9. E. H. Putley, The Hall Effect and Related Phenomena, London, 1960.

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pődör, B., Ivánka, C. Magnetoresistivity ofn-type GaAs single crystals in the impurity scattering range. Acta Physica 25, 115–118 (1968). https://doi.org/10.1007/BF03159216

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03159216

Keywords

Navigation