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Energy distribution of traps in GaP crystals

Распределение энергии ловушек в кристаллах GaP

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Acta Physica Academiae Scientiarum Hungaricae

Abstract

Current-voltage characteristics in the [111] direction of slightlyp-type GaP: Cu crystals were investigated. Temperature variations of the power dependence of current on voltage indicate the presence of two sets of traps having exponential distribution in energy. Because of the slightp-type conduction and Cu centres present, the interpretation of the characteristics was based on anAshley-Milnes type [4] two-carrier model extended for the case of trapping.

Резюме

Исследовались вольт-амперные характеристики кристаллов GaP: Cu с небольшой дырочной проводимостью в направлении [111]. Температурные изменения показательной зависимости тока от напряжения говорит о наличии двух типов ловушек, имеющих экспоненциальное распределение энергии. Из-за небольшой дырочной проводимости и наличия центров Cu интерпретация характеристик основывается на модели двух носителей Эшли—Милнса, распространненная на случай ловушек.

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Authors and Affiliations

  1. Research Group on Luminescence and Semiconductors of the Hungarian Academy of Sciences, Szeged

    J. Gyulai

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  1. J. Gyulai
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Gyulai, J. Energy distribution of traps in GaP crystals. Acta Physica 29, 75–78 (1970). https://doi.org/10.1007/BF03157886

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  • DOI: https://doi.org/10.1007/BF03157886

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