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Computermodelle für Mikrowellenleistungstransistoren

Computer simulation for microware power transistors

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Zusammenfassung

Moderne Mobilfunksysteme, wie z. B. die dritte Generation von Mobiltelefonen (UMTS) oder der digitale Hörrundfunk (DAB), erfordern den Einsatz hochlinearer Sende-Endverstärker. Für den Entwurf derartiger Verstärker sind analytische Modelle der verwendeten Treiber- und Endstufentransistoren erforderlich, die das nichtlineare Großsignalverhalten möglichst präzise beschreiben. Im folgenden Beitrag wird gezeigt, wie ein auf Messungen der DC-Kennlinien und des Kleinsignalverhaltens beruhendes Modell zur Computersimulation des Großsignalverhaltens von Mikrowellenleistungstransistoren erstellt werden kann. Dabei wird besonders darauf eingegangen, welche Effekte das Modell für den Einsatz in der Entwicklung von Mobilfunksendeverstärkern wiedergeben muss.

Abstract

Coming cell phone systems like UMTS or digital audio broadcast (DAB) systems impose high demands on transmitter amplifier linearity. Analytical models of the microwave transistors used in the driver and power amplifier stages are necessary to describe the large signal behavior for design optimization. This paper shows how DC-IV and small signal measurements are used to generate a large signal model of microwave power transistors. Effects that have special influence on transmitter amplifiers will be emphasized.

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Authors and Affiliations

  1. Institut für Elektrische Mess- und Schaltungstechnik, Technische Universität Wien, Gußhausstraße 25/354, A-1040, Wien

    D. Smely & G. Magerl

  2. Electronic and Electrical Engineering, Belfield, University College Dublin, Dublin 4, Irland

    V. Cojocaru & T. J. Brazil

Authors
  1. D. Smely
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  2. V. Cojocaru
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  3. T. J. Brazil
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  4. G. Magerl
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Smely, D., Cojocaru, V., Brazil, T.J. et al. Computermodelle für Mikrowellenleistungstransistoren. Elektrotech. Inftech. 117, 736–743 (2000). https://doi.org/10.1007/BF03157746

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