Abstract
Some results and problems obtained during galvanomagnetic investigations of Zn and Te doped SG GaP crystals are described. Special attempts were made to select samples with good homogeneity as for the impurity distribution in crystals. Resistivity and Hall effect have been measured and temperature dependence of carrier concentration and mobility have been analysed. Temperature range of investigations lay between 80 and 400 K. Problems in reliability of fitting results were discovered and these problems are discussed. For practical purposes a method is suggested to reduce possible error in necessary parameters.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Weiss andH. Welker, Zeitschr. Phys.,138, 322, 1954.
H. C. Casey, Jr.,F. Ermanis andK. B. Wolfstirn, J. Appl. Phys.,40, 2945, 1969.
K. Somogyi, phys. stat. sol. (a),37, 653, 1976.
e.g.J. D. Wiley, Phys. Rev.,B4, 2485, 1971.
R. A. Hutson, Phys. Rev.,108, 222, 1957.
K. Somogyi, phys. stat. sol. (a),20, K127, 1973.
T. A. Polyanskaya, private communication.
H. C. Montgomery, J. Appl. Phys.,39, 2002, 1968.
K. Somogyi, to be published.
K. Somogyi, MTA MFKI Közlemények,0–13, 27, 1974.
H. Fritzsche, Phys. Rev.,99, 406, 1955.
K. Somogyi, phys. stat. sol. (a),35, 659, 1976.
K. Somogyi, to be published.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Somogyi, K. On the electrical properties of GaP single crystals. Acta Physica 44, 61–68 (1978). https://doi.org/10.1007/BF03157220
Issue Date:
DOI: https://doi.org/10.1007/BF03157220