Abstract
Undopedp-type and Te-dopedn-type LPE GaP layers have been studied. Hall measurements were carried out in common circumstances. Effort was concentrated on the analysis of temperature dependence of free carriers using the model of a nondegenerate compensated semiconductor with one donor and acceptor level. The analysis has been made following “straight line method” and using a linear regression analysis. The strategy of finding necessary minima is described. Results are discussed and the question of unambiguity of the solution is pointed out. Suggestions have been given to improve results of analysis.
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Maege, J. Some remarks about the evaluation of measured Hall data on GaP. Acta Physica 44, 55–59 (1978). https://doi.org/10.1007/BF03157219
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DOI: https://doi.org/10.1007/BF03157219