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Influence of the technological circumstances on the homogeneity of n-GaAs epitaxial structures

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

GaAs epitaxial layers have been grown for microwave device purposes. For device fabrication one of the most important features of the epitaxial structures/layers is the homogeneity of the electrophysical properties along the surface.

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References

  1. M. Heyen and P. Balk, Prog. Crystal Growth Charact.,6, 265, 1983.

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  2. I. Gyúró, T. Görög, K. Somogyi, Á. Nemcsics, Proc. Symp. Electronics Technology, 16–19 April, 1985, Budapest, Hungary, Proc. Vol. I. pp. 38–141.

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Authors and Affiliations

  1. Research Institute for Technical Physics, Hungarian Academy of Sciences, 1325, Budapest, Hungary

    K. Somogyi, I. Gyúró, Á. Nemcsics & Sz. Varga

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  1. K. Somogyi
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  2. I. Gyúró
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  3. Á. Nemcsics
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  4. Sz. Varga
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Somogyi, K., Gyúró, I., Nemcsics, Á. et al. Influence of the technological circumstances on the homogeneity of n-GaAs epitaxial structures. Acta Physica Hungarica 70, 249–257 (1991). https://doi.org/10.1007/BF03156273

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  • DOI: https://doi.org/10.1007/BF03156273

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