Abstract
In this paper we investigated HP-LEC, LP-LEC and HB-grown GaAs single crystals. Carbon concentration was determined by optical absorption due to the presence of carbon in anionic sublattice. Our experiments show that: 1. Contamination level in the crystals practically does not depend on the volume of graphite in the chamber. 2. Carbon concentration in the crystal increases with the increase of the inert gas pressure and chamber volume. 3. There is a remarkable increase in carbon concentration in LP-LEC and HB-crystals with the addition of several vol% of CO2 into the inert gas. 4. Oxygen injection into the melt decreases carbon concentration.
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Nosovsky, A.M., Bolsheva, Y.N., Ilyin, M.A. et al. Carbon in undoped Si-GaAs: The influence of growth conditions. Acta Physica Hungarica 70, 211–216 (1991). https://doi.org/10.1007/BF03156268
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DOI: https://doi.org/10.1007/BF03156268