Abstract
Electroluminescence diodes were grown on single crystal GaP substrates, by liquid phase epitaxy. At low current density, the electroluminescence spectra were no longer green but shifted closer to yellow. The donor-acceptor pair Zn−Te, LO phonon and the exciton line A were dominated at higher AC current density.
The irradiation of GaP∶N with γ-rays results in strong quenching of recombination radiation, which reduces the quantum efficiency of the luminescence line spectra at 77 and 300K. No new line spectra are generated by γ-irradiation with doses 104−106 Gy.
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Mounir, M. Effect of γ-irradiation and current density on the electroluminescence spectra of GaP∶N. Acta Physica Hungarica 67, 305–310 (1990). https://doi.org/10.1007/BF03155811
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DOI: https://doi.org/10.1007/BF03155811