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Effect of pressure on the growth of the crystallites of low pressure chemical vapour deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin film transistors

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

The morphology of the polysilicon films obtained at temperatures below the softening point of glass, by low pressure chemical vapour deposition as related to pressure of the pure silane used for the growth is examined and is related to the characteristics of the thin film transistors from these films in order to establish the optimum conditions of the switching performance in their application as pixel elements in peripherals.

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Authors and Affiliations

  1. Department of Physics, Solid State Section, Aristoteles University of Thessaloniki, 54006, Thessaloniki, Greece

    C. A. Dimitriadis, J. Stoemenos, S. Friligkos, J. Antonopoulos & N. A. Economou

  2. Hirst Research Centre, GEC Research Ltd, HA9 7PP, Wembley, Middlesex, UK

    P. A. Coxon

Authors
  1. C. A. Dimitriadis
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  2. J. Stoemenos
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  3. P. A. Coxon
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  4. S. Friligkos
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  5. J. Antonopoulos
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  6. N. A. Economou
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Dimitriadis, C.A., Stoemenos, J., Coxon, P.A. et al. Effect of pressure on the growth of the crystallites of low pressure chemical vapour deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin film transistors. Acta Physica Hungarica 74, 155–160 (1994). https://doi.org/10.1007/BF03055247

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  • DOI: https://doi.org/10.1007/BF03055247

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