Synchrotron radiation studies of III–V semiconductors

Abstract

The fourth generation synchrotron facilities with insertion devices including the Adjustable Phase undulator produce high intensity, highly collimated X-ray beams of energy and polarization dictated by the investigation needs, providing a unique tool in the study of III-V semiconductors. The X-ray topography is used in the study of bulk crystal perfection and for surface investigation.

The Grazing Incidence X-ray scattering (GIXS) is a novel technique for interfaces perpendicular to the crystal surface’s topography.

The Synchrotron X-ray fluorescence (SXRF) provides quantitative analysis up to the 0.1 ppm level in areas of 20 μm.

The Extended X-ray Absorption Fine Structure (EXAFS) analysis is becoming increasingly important as a tool for probing local atomic environments of condensed matter and surface atoms. Local structure of DX-like centers is obtained from EXAFS spectra.

The XAFS spectroscopy can be used to investigate the relationship between the structure of local environment of the impurity atoms and the macroscopic electrical properties of compound semiconductor materials.