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Electrical behaviour of ion-mixed Au/n-GaAs contacts

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

The effect of Ar+ (400 keV) and Xe++ (700 keV) bombardment and consecutive annealing (250–525 °C for 10 min in forming gas) on the electrical behaviour of n-type Au/GaAs Schottky junctions are studied. The obtained anomalous I–V and C-V characteristics are treated in comparison with the formation of crystal defects, the growth of different grains and the phase transitions observed by cross-sectional transmission electron microscopy.

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References

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Authors and Affiliations

  1. Research Institute for Technical Physics, Hungarian Academy of Sciences, 1325, Budapest, Hungary

    Zs. J. Horváth, B. Pécz & M. Németh-Sallay

  2. KFKI Research Institute for Materials Science, Hungarian Academy of Sciences, 1525, Budapest, Hungary

    E. Jároli

Authors
  1. Zs. J. Horváth
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  2. B. Pécz
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  3. E. Jároli
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  4. M. Németh-Sallay
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Horváth, Z.J., Pécz, B., Jároli, E. et al. Electrical behaviour of ion-mixed Au/n-GaAs contacts. Acta Physica Hungarica 74, 65–71 (1994). https://doi.org/10.1007/BF03055238

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  • DOI: https://doi.org/10.1007/BF03055238

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