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Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it, is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardement.

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  1. Research Institute for Technical Physics, Hungarian Academy of Sciences, 1325, Budapest, Hungary

    Zs. J. Horváth

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Horváth, Z.J. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions. Acta Physica Hungarica 74, 57–64 (1994). https://doi.org/10.1007/BF03055237

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