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On the irradiation lattice damage effect upon the electrical characteristics of a semiconductor p-n junction

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

A physical model for a present-day manufactured semiconductor p-n junction is presented, for a better understanding of the modification of the current-voltage characteristics of bipolar devices, in a radiation environment.

Such a modification is attributed rather to irradiation induced electronic processes in the surface peripheral space electric charge layer and not to the induced defects in the p-n junction bulk. Experimental results are shown for III–V semiconductor diodes which were γ-irradiated and which can be explained by using the proposed model.

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Authors and Affiliations

  1. Research Institute for Electronic Components (ICCE), Bucharest II, 72996, Romania

    V. V. Obreja

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  1. V. V. Obreja
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Obreja, V.V. On the irradiation lattice damage effect upon the electrical characteristics of a semiconductor p-n junction. Acta Physica Hungarica 74, 31–35 (1994). https://doi.org/10.1007/BF03055235

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  • DOI: https://doi.org/10.1007/BF03055235

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