Abstract
This contribution reviews the research work performed at the Johannes Kepler University of Linz, Austria, on the development of oscillators for the microwave and millimeter wave frequency range. This work, performed by the Microelectronics Institute and the Institute for Communications and Information Engineering, covers the range from low GHz frequencies up to 61 GHz and is devoted to applications like mobile communications and sensing. The active devices are based on gallium arsenide (GaAs), silicon germanium (SiGe), and Silicon (Si) and include Gunn-devices, bipolar transistors, and CMOS-technology.
Zusammenfassung
Dieser Beitrag stellt die Forschungsarbeiten am Institut für Mikroelektronik und dem Institut für Nachrichtentechnik/Informationstechnik der Johannes Kepler Universität Linz auf dem Gebiet der integrierten Mikro- und Millimeterwellenoszillatoren vor. Die Arbeiten umfassen den Frequenzbereich von 1 GHz bis 61 GHz und haben Anwendungen im Bereich der Sensorik und des Mobilfunks zum Ziel. Es kommen Gallium-Arsenid (GaAs), Silizium (Si) und Silizium-Germanium (SiGe) als Halbleitermaterialien zum Einsatz. Die Oszillatoren basieren auf dem Gunn-Effekt bzw. verwenden Bipolar-Transistoren oder CMOS-Technologie.
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Stelzer, A., Springer, A. Microwave and millimeterwave oscillator developments at the Johannes Kepler University. Elektrotech. Inftech. 120, 98–101 (2003). https://doi.org/10.1007/BF03054863
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DOI: https://doi.org/10.1007/BF03054863