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Influence of cross-field configuration on the einstein relation in quantum wires of tetragonal semiconductors

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

An attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons is quantum wires of tetragonal semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derived electron energy spectrum considering all types of anisotropies in the band parameters. It is found taking n-Cd3As2 as an example that the same ratio increases with electron concentration in an oscillatory way. Besides, it decreases with increasing thickness and the crystal field splitting influences significantly the ratio in the whole range of the variables considered. We have also suggested an experimental method of determining the Einstein relation in degenerate materials having arbitrary dispersion laws. The results for quantum wires of parabolic semiconductors have been also obtained from our generalized expressions in the absence of cross-field configuration under certain limiting conditions.

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Authors and Affiliations

  1. Department of Electronics and Telecommunication Engineering Faculty of Engineering and Technology, Jadavpur University, 700032, Calcutta, India

    K. P. Ghatak

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Ghatak, K.P. Influence of cross-field configuration on the einstein relation in quantum wires of tetragonal semiconductors. Acta Physica Hungarica 72, 147–159 (1992). https://doi.org/10.1007/BF03054159

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  • DOI: https://doi.org/10.1007/BF03054159

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