Skip to main content
Log in

Development of an S-band klystron with bandwidth of 11%

  • Letters
  • Published:
Journal of Electronics

Abstract

This letter introduces the design ideas, simulation and test results of an S-band klystron with bandwidth of 11%, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS). On the peak power level of 800 kW, the efficiency of klystron is more than 30%; the gain is more than 41 dB; the equal-driving relative instantaneous bandwidth is over 11%; the average power is larger than 8 kW, and the power fluctuation within bandwidth is less than 1.5 dB.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. Ding Yaogen, The state of art and trend for high power klystron, Vacuum Electronics, (1995)2, 12–17, (in Chinese).

  2. S. Silaev, Iso-parametric finite element analysis of time-harmonic electromagnetic fields in three dimensions, Nuclear Instruments and Methods in Physics Research, A328(1993), 535–541.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

About this article

Cite this article

Wang, Y., Ding, Y., Zhang, J. et al. Development of an S-band klystron with bandwidth of 11%. J. of Electron.(China) 21, 522–524 (2004). https://doi.org/10.1007/BF03037002

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03037002

Key words

Navigation