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Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate

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Abstract

15 nm-Co/15 nm-Ni/p−Si (100) was thermally annealed using rapid thermal annealing for 40 s at 700∼1100°C. The annealed bilayer structure developed into the composite CoNiSix and the resulting changes in sheet resistance, microstructure, and composition were investigated using a four-point probe, transmission electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The final thickness of the composite CoNiSix was approximately 100 nm and it maintained its sheet resistance below 5 Ω/sq after silicidation annealing at 1100°C. The proposed CoNiSix silicides may be superior to conventional single phased silicides due to their improved thermal stability and thickness adjustment.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, The University of Seoul, 90, Jeonnong-dong, Dongdaemun-gu, 130-743, Seoul, Korea

    Seonghwee Cheong & Ohsung Song

  2. Department of Information and Communications Engineering, Tongmyong University, 525, Yongdang-dong, Nam-gu, 608-711, Busan, Korea

    Min-Sung Kim

Authors
  1. Seonghwee Cheong
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  2. Ohsung Song
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  3. Min-Sung Kim
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Correspondence to Seonghwee Cheong.

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Cheong, S., Song, O. & Kim, MS. Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate. Met. Mater. Int. 12, 189–192 (2006). https://doi.org/10.1007/BF03027477

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