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The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN

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Abstract

The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900°C. Synchrotron radiation photoemission spectroscopy revealed that the Ga−Mn magnetic phases contributing to ferromagnetic properties increased. Mn−N binary phases such as Mn6N258 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga−Mn magnetic phases.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Gyeongbuk, Korea

    Jeong Min Baik & Jong-Lam Lee

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  1. Jeong Min Baik
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  2. Jong-Lam Lee
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Correspondence to Jong-Lam Lee.

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Baik, J.M., Lee, JL. The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN. Met. Mater. Int. 10, 555–558 (2004). https://doi.org/10.1007/BF03027418

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