Abstract
Thermoelectric effects were used in the conventional tungsten-halogen lamp ZMR process to control the defect morphology of SOI thin film by changing the temperature distribution across the solidification front. Computer simulation analyses evaluated the effect of the thermoelectric phenomena on the temperature distribution across the solidification front. The morphology of the solidification front stabilized in the presence of positive current, but destabilized in negative current. The computer simulation demonstrated that positive current increased the superheating of the solid, while negative current caused an increase in liquid supercooling at the solidification interface. The computer analyses agreed well with the experimental results.
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Hong, S.M., Lee, J.W. & Kang, C.S. Thermoelectrically effected morphological change in the solidification interface and defects of ZMR-SOI thin film. Metals and Materials 3, 137–143 (1997). https://doi.org/10.1007/BF03026138
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DOI: https://doi.org/10.1007/BF03026138