Skip to main content
SpringerLink
Log in

Oxygen concentration inhomogeneity in the silicon melt of the czochralski single crystal growth system

  • Published:
Metals and Materials Aims and scope Submit manuscript

Abstract

The momentum, heat and mass transfer in the silicon melt of the Czochralski crystal growth system were calculated with a three dimensional numerical simulation technique. Several types of non-axisymmetric profiles of velocities, temperature and oxygen concentration appeared in the melt with axisymmetrical boundary conditions. Since the asymmetric profiles and the rotations of fluid, temperatures and oxygen concentration fluctuated in the melt. The correlations between both fluctuations at the same point became larger, as the convection grew stronger. The calculation also showed that the temperature and oxygen concentration near the interface also fluctuated. The results suggested that the oxygen concentration could be considered one of the causes of the striation pattern in grown silicon single crystals.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Müller,Crystal Growth from the Melt, p. 8, Springer-Verlag, Berlin (1988).

    Google Scholar 

  2. J. A. Burton, R. C. Prim and W. P. Slichter,J. Chem. Phys. 21, 1987 (1953).

    Article  ADS  CAS  Google Scholar 

  3. A. Murgai, H. C. Gatos, W. A. Westdorp,J. Electrochem. Soc. 126, 2240 (1979).

    Article  CAS  Google Scholar 

  4. K. Kakimoto, M. Watanabe, M. Eguchi and T. Hibiya,J. Crystal Growth 126, 435 (1993).

    Article  ADS  Google Scholar 

  5. K.-W. Yi, K. Kakimoto, Z. G. Niu, M. Eguchi, H. Noguchi, S. Nakamura and K. Mukai,J. Electrochem. Soc. 143, 722 (1996).

    Article  CAS  Google Scholar 

  6. H. Hirata and K. Hosikawa,J. Cryst. Growth 106, 657 (1990).

    Article  ADS  CAS  Google Scholar 

  7. S. V. Patankar,Numerical Heat Transfer and Fluid Flow, p. 118, McGraw-Hill, New York (1980).

    Google Scholar 

  8. S. V. Patankar,Numerical Heat Transfer and Fluid Flow, p. 125, McGraw-Hill, New York (1980).

    Google Scholar 

  9. J. R. Ristorelli and J. L. Lumley,J. Crystal Growth 116, 447 (1992).

    Article  ADS  Google Scholar 

  10. A. Seidl, G. McCord, G. Milier and H.-J. Leister,J. Crystal Growth 137, 326 (1994).

    Article  ADS  CAS  Google Scholar 

  11. K.-W. Yi, V. B. Booker, M. Eguchi, T. Shyo and K. Kakimoto,J. Crystal Growth 156, 383 (1995).

    Article  ADS  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Materials Science and Engineering, Seoul National University, San 56-1 Shinrim-dong, Kwanak-ku, 151-742, Seoul, Korea

    Min-Cheol Kim & Kyung-Woo Yi

Authors
  1. Min-Cheol Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kyung-Woo Yi
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kim, MC., Yi, KW. Oxygen concentration inhomogeneity in the silicon melt of the czochralski single crystal growth system. Metals and Materials 4, 89–94 (1998). https://doi.org/10.1007/BF03026070

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03026070

Key words

Search

Navigation