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Growth and dislocation distribution of single Si1-xGex/Si(001) epilayer structures grown by gas source molecular beam epitaxy

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Abstract

Single Si1-xGex epilayer on Si buffer layer (~100 nm) was grown by gas source molecular beam epitaxy (GS-MBE) at 640°C. Samples were investigated by transmission electron microscopy. For all the samples investigated, the misfit dislocations were irregularly distributed along the [110] and [110] directions. As the Ge content, x, in Si1-xGex/Si epilayers (x≤0.15) increased, the distribution of dislocations changed from a 2 dimensional to a 3 dimensional network in both the epilayer and buffer-substrate. The majority of misfit dislocations in the Si1-xGex/Si(001) epilayers was of 60° type dislocations.

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Authors and Affiliations

  1. Department of Metallurgical Engineering, Pusan National University, San 30 Changchun-dong, Keumjung-ku, 609-735, Pusan, Korea

    Won Jae Lee & Anne Staton-Bevan

  2. Department of Materials, Imperial College of Science and Technology, SW7 2BP, London, UK

    Anne Staton-Bevan

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  1. Won Jae Lee
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  2. Anne Staton-Bevan
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Lee, W.J., Staton-Bevan, A. Growth and dislocation distribution of single Si1-xGex/Si(001) epilayer structures grown by gas source molecular beam epitaxy. Metals and Materials 4, 1001–1005 (1998). https://doi.org/10.1007/BF03025968

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