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Study of modal structure of a semiconductor laser by measurement of the complex degree of coherence

Étude de la structure modale d’un laser a semiconducteur par mesure du degré complexe de cohérence

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Abstract

The evaluation of the amplitude of the lateral transverse modes emitted by a semiconductor laser, by means of near or farfield techniques, generally is not easy. In this paper the behaviour of the optical coherence function provides much more sensitive method of analysis. A simple way of implementing the above analysis is described and the results of an experiment are reported.

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Les techniques habituelles d’analyse du champ proche ou du champ lointain des lasers à semiconducteur souvent ne permettent pas la détermination de l’amplitude des modes latéraux transversaux. Dans cet article il est montré que la connaissance du degré de cohérence optique permet une analyse beaucoup plus sensible des amplitudes des modes, en particulier lorsqu’elles sont très différentes. Une simple méthode capable de donner le degré de cohérence est décrite et les résultats expérimentaux obtenus sont donnés.

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References

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Spano, P., Dumant, JM. & Guillausseau, Y. Study of modal structure of a semiconductor laser by measurement of the complex degree of coherence. Ann. Telecommun. 35, 231–235 (1980). https://doi.org/10.1007/BF02998385

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  • DOI: https://doi.org/10.1007/BF02998385

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