Abstract
This paper presents an oscillator design using a new concept of a fet model, which allows to characterize the single side source grounded configuration of a fet, and therefore to predict the oscillator frequency in the millimetre wave range very precisely. The freerunning oscillator was fabricated on a GaAs chip. At 36 GHz an output power of 14 dBm, and an external quality factor of greater than 100 was achieved.
Résumé
Une nouvelle modélisation de tec permet de caractériser une telle configuration et de prévoir ainsi de façon précise la fréquence de ľ oscillateur dans le domaine des ondes millimétriques. Un oscillateur en fonctionnement libre a été fabriqué sur une puce en GaAs. A 36 GHz une puissance de sortie atteint 14 dBm et le facteur de qualité externe dépasse 100.
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References
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Telefunken Electronic, Heilbronn, Germany.
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Baumann, G. A 36 ghz gaas oscillator with a mesfet in single side source grounded configuration. Ann. Télécommun. 47, 533–535 (1992). https://doi.org/10.1007/BF02998316
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DOI: https://doi.org/10.1007/BF02998316