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Two-terminal millimetre wave devices

Dispositifs Monoportes en Ondes Millimétriques

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Abstract

The basic principles of RF-power generation in the millimetre wave range for two-terminal semiconductor devices are described. The most important devices, Impatt diode and Gunn element, as well as less known structures like Baritt, Mitatt, Tunnett, PIN-avalanche, double-barrier, and Qwitt are presented. The limitations in output power and efficiency for elevated millimetre wave frequencies are discussed and rf-power, conversion efficiency, and noise behaviour of the different devices are compared.

Résumé

Ľarticle décrit les principes fondamentaux de la production de puissance radiofréquence dans le domaine des ondes millimétriques. Les dispositifs les plus importants comme les diodes Impatt (à impact et à temps de transit) et Gunn sont étudiées en même temps que les structures moins connues telles que les diodes à temps de transit Bariti (injection à travers une barrière de potentiel), Mitatt (effet mixte avalanche et tunnel), Tunnett (effet tunnel), pin à avalanche et Qwitt (puits quantique). Les caractéristiques les plus importantes de ces dispositifs sont passées en revue. Les limites en puissance de sortie et le rendement aux fréquences les plus élevées sont examinées tandis que les puissances rf, les rendements de conversion et les caractéristiques de bruit des divers dispositifs sont comparés.

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  1. Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universität München, Arcisstrasse 21, 8000, München 2, Allemagne

    Jürgen Freyer

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  1. Jürgen Freyer
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Freyer, J. Two-terminal millimetre wave devices. Ann. Télécommun. 47, 485–492 (1992). https://doi.org/10.1007/BF02998310

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  • DOI: https://doi.org/10.1007/BF02998310

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