Skip to main content
SpringerLink
Log in

Sélection de modes dďun laser Fabry-Pérot InGaAsP à 1,5 µm par la transition I15/2 -→I13/2 de Er3+

Mode selection of a fabry-pÉrot inGaAsP laser at 1.5 µm by the er3+ 4I15/2 →I13/2 transition

  • Published:
Annales Des Télécommunications Aims and scope Submit manuscript

Résumé

LĽarticle étudie la sélection de modes dľun laser Fabry-Pérot InGaAsP multimode à 1,5 µm par lľutilisation des absorptions atomiques de ľion Er3+, Cette nouvelle technique consiste à insérer des échantillons dopés Er3+ dans la cavité laser. Le processus de sélection de mode n’est pas lié à un effet Fabry-Pérot de ces échantillons, mais à lľabsorption linéaire entre niveaux Stark de lľion Er3+ dans la matrice. LĽétude comprend une partie théorique (modélisation) et une partie expérimental. On montre que lľon peut obtenir un taux de réjection de mode de 35 dB en combinant dans la cavité laser deux lames dopées Er3+, respectivement de LiYF4: Er3+ orientée de type π et de Er3 (Al, Ga)5O12- Le prototype dľun laser compact a été réalise avec une longueur totale de cavité de 450 µm. Ce procédé à la fois simple et economique permet dľ obtenir une réjection aussi bonne que celle fournie par la technique dfb (distributed feedback) mais à une fréquence qui peut être prédéterminée a 0,5 nm prés de maniére absolue par la transition de Er3+ dans sa matrice.

Abstract

This work aimed to study Fabry-Pérot InGaAsP laser mode selection at 1.5 µm by means of atomic absorptions of ion Er3+. This new mode selection technic is not linked with a Fabry-Pérot effect coming from geometrical properties of the doped samples, but is caused by linear absorption between Stark levels of Er3+ in its own matrix. The study is divided into two points: theoretical simulation and experiments. It is shown that a side mode rejection of 35 dB is obtained by combining a LiYF4:Er3+ crystal π oriented with a Er3 (Al, Ga)5O12 one inside the laser cavity. A compact laser prototype of an over all length of 450 µm as also been obtained. This mode selection method which is both simple and economic allows to obtain results about as good as with dfb (distributed feed-back) lasers but at a predetermined absolute wavelength (± 0.5 nm) fixed by Er3+ doped samples transitions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Bibliographie

  1. Lee (T. P.), Burrus (C. A.), Copeland (J. A.), Dentai (A. G.), Marcuse (D.). Short cavity InGaAsP injection lasers: dependance of mode spectra and single-longitudinal-mode power on cavity length.IEEE J. QE (1982),18, pp. 1101.

    Article  Google Scholar 

  2. David (K.), Buus (J.), Baets (R. G.). Basic analysis of ARcoated, partly gain-coupled dfb lasers: the standing wave effect.IEEE J. QE (1992),28, p. 427.

    Article  Google Scholar 

  3. Kawanishi (H.), Suematsu (Y.), Itaya (Y.), Arai (S.). GaxIn1_x AsyP1_yInP injection laser partially loaded with distributed Bragg reflector.Japan J. Appl. Phys. (1978),17, p. 1439.

    Article  Google Scholar 

  4. Choi (H. K.), Chen (K. L.), Wang (S.). Analysis of two-section coupled cavity semiconductor lasers.IEEE J. QE (1984),20, p. 385.

    Article  Google Scholar 

  5. Kobayashi (S.), Kimura (T.). Injection locking in AlGaAs semiconductor lasers.IEEE J. QE (1981),17, p. 681.

    Article  Google Scholar 

  6. Auzel (F.). French-Israeli Workshop on solid state laser.SPIE (1988),1182, p. 59.

    Google Scholar 

  7. Ennen (H.), Schneider (J.), Pomrenke (G.), Axmann (A.). 1.54 µm luminescence of erbium-implanted III-V semiconductors and silicon.Appl. Phys. Lett. (1983),43, p. 943.

    Article  Google Scholar 

  8. Tsang (W T.), Logan (R. A.). Observation of enhanced single longitudinal mode operation in 1.5 µm GalnAsP erbium-doped semiconductor injection lasers.Appl. Phys. Lett. (1986),49, p. 1686.

    Article  Google Scholar 

  9. Van Der Ziel (J. P.), Oberg (M. G.), Logan (R. A.). Single longitudinal mode operation of Er-doped 1.5 µm InGaAsP lasers.Appl. Phys. Lett. (1987),50, p. 1313.

    Article  Google Scholar 

  10. Auzel (E), Jean-Louis (A. M.), Toudic (Y). Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+ and Er3+ in III-V compounds.J. Appl. Phys. (1989),66, p. 3952.

    Article  Google Scholar 

  11. Dietel (W), Kühlke (D.), Sander (H.). Mode selection by homogeneous broadening and non-linear absorption.Opt. and Quant. Electron. (1975),7, p. 345.

    Article  Google Scholar 

  12. Sakai (Y), Sudo (S.), Ikegami (T.). Frequency stabilization of laser diodes using 1.51-1.55 µm absorption lines of12C2H2 and13C2H2.IEEE J. QE (1992),28, p. 75.

    Article  Google Scholar 

  13. Auzel (E), Zhou (B. W.), Meichenin (D.), Jean-Louis (A. M.). Passive wavelength stabilization in the 1.5 µm region of wide gain spectrum lasers by Er3+ doped materials.J. Appl. Phys. (1991),69, p. 7310.

    Article  Google Scholar 

  14. Gordon (I. E.). Optical maser oscillators and noise.Bell. Syst. Tech. J. (1964),43, p. 507.

    Google Scholar 

  15. Röss (D.). Laser, light, amplifiers and oscillators.Academic Press (1969).

  16. Agrawal (G. P.),Dutta (N. K.). Long-wavelength semiconductor lasers. Van Nostrand Reinhold (1986), ch. 6.

  17. Hubert (S.), Meichenin (D.), Zhou (B. W.), Auzel (E). Emission properties, oscillator strength and laser parameters of Er3+ in LiYF4 at 2.7 µm.J. Lum. (1991),50, p. 7.

    Article  Google Scholar 

  18. Zhou (B. W.). Probabilités de transitions entre niveaux Stark de Er3+ et sélection de mode dďun laser à semi-conducteur à 1,5 µm.Thése, Univ. Paris VI (1992), p. 168.

Download references

Author information

Authors and Affiliations

  1. France Télécom, CNET-PAB, Laboratoire de Bagneux, F-92225 Bagneux Cedex, BP 107, France

    Bei Wen Zhou & François Auzel

Authors
  1. Bei Wen Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. François Auzel
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhou, B.W., Auzel, F. Sélection de modes dďun laser Fabry-Pérot InGaAsP à 1,5 µm par la transition I15/2 -→I13/2 de Er3+. Ann. Télécommun. 48, 546–556 (1993). https://doi.org/10.1007/BF02995490

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02995490

Mots clés

Search

Navigation