Abstract
Phenomenological approach has been used to determine the threshold pump strain by assuming that at this strain the pump generates an electric field for which the drift velocity of the carriers equals the sound velocity. Numerical values obtained forn-InSb have been compared with similar studies which are based on Boltzmann transport approach.
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References
Dyakonov A M and Lisavskii Yu V I 1970Sov. Phys. — Solid State 11 2110
Eckstein S 1963Phys. Rev. 131 1087
Elbaum C and Truell R 1964Appl. Phys. Lett. 4 312
Johri G and Spector H N 1977Phys. Rev. B15 1955
Komar V K and Timan B L 1970Sov. Phys. — Solid State 12 248
Kroger H 1964Appl. Phys. Lett. 4 190
Mauro R and Wang W C 1967Phys. Rev. Lett. 19 693
Tell B 1964Phys. Rev. A136 772
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Thakur, R.Y., Singh, B.K. & Roy, R.D. Threshold pump strain for parametric amplification inn-indium antimonide. Pramana - J. Phys. 30, 429–433 (1988). https://doi.org/10.1007/BF02935598
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DOI: https://doi.org/10.1007/BF02935598