Abstract
Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. the full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 μm thick was 72 arcmin, and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. At room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.
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References
Strite, S., Morkoc, H., GaN, AlN, and InN: A review,J. Vac. Sci. Technol., 1992, B10(4): 1237.
Goldenberg, B., Zook, J. D., Ulmer, R. J., Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition,Appl. Phys. Lett., 1993, 62(4): 381.
Nakamura, S., Senoh, M., Nagahama, S. et al., Room-temperature continuous-wave operation of InGaN multiquantum-well structure laser diodes with a lifetime of 27 hours,Appl. Phys. Lett., 1997, 70(11): 1417.
Amano, H., Sawaki, N., Akasaki, I. et al., Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer,Appl. Phys. Lett., 1986, 48(5): 353.
Nakamura, S., GaN growth using GaN buffer layer.Jpn. J. Appl. Phys., 1991, 30(10A): L1705.
Amano, H., Kito, M., Hiramatsu, K. et al., P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),Jpn. J. Appl. Phys., 1989, 28(12): L2112.
Nakamura, S., Mukai, T., Senoh, M. et al., Thermal annealing effects of p-type Mg-doped GaN films,Jpn. J. Appl. Phys., 1992, 31(2B): L139.
Nakamura, S., Senoh, M., Mukai, T., P−GaN/N−InGaN/N−GaN double-heterostructure blue-light emitting diodes,Jpn. J. Appl. Phys., 1993, 32(1A/B): L8.
Butter, E., Fitzi, G., Hirsch, D. et al., The deposition of group III nitrides on silicon substrates,Thin Solid Films, 1979, 59(1): 25.
Lei, T., Fanciulli M., Molnar, R.J. et al., Epitaxial growth of zinc blende and wurtzite gallium nitride thin films on (001) silicon,Appl. Phys. Lett., 1991, 59(8): 944.
Wyckoff, R. W. G.,Crystal Structures, 2nd ed., New York: Interscience, 1965, Vol. 3, 84.
Itoh, N., Okamoto, K., A new technique for crystallographic characterization of heteroepitaxial crystal films.J. Appl. Phys., 1988, 63(5): 1486.
Qian, W., Skowronski M., Graef, M. De, Microstructural characterization of α-GaN films grown on sapphire by organ-metallic vapor phase epitaxy,Appl. Phys. Lett., 1995, 66(10): 1252.
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Project supported by the “863” Advanced materials Committee of China and the Planning Commission of China.
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Wang, L., Liu, X., Zan, Y. et al. Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates. Sci. China Ser. E-Technol. Sci. 41, 203–207 (1998). https://doi.org/10.1007/BF02919684
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DOI: https://doi.org/10.1007/BF02919684