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The X-ray characterization of InGaN and AiGaN heterostructures for blue-light emitters

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Abstract

III–V compound semiconductors in the InAlGaN system are being developed for commercial applications in both electronic and optoelectronic devices. For example, the growth and characterization of quantum-well heterostructures is of increasing interest for visible (especially blue and green) light-emitting diodes and injection lasers. The crystallographic and optical properties of these materials are of critical importance in these applications. In this article, the results of x-ray diffraction studies of the structural characteristics of InGaN and AlGaN heterostructures grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates are discussed.

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Authors
  1. C. J. Eiting
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  2. P. A. Grudowski
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  3. R. D. Dupuis
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Additional information

C. Eiting earned his M.S. in electrical engineering from the University of Texas at Austin in 1996. He is currently a graduate research assistant at the University of Texas at Austin.

P. Grudowski earned his M.S. in electrical engineering from the University of Texas at Austin in 1995. He is currently a graduate student at the University of Texas at Austin.

R.D. Dupuis earned his Ph.D. in electrical engineering from the University of Illinois Urbana—Champaign in 1973. He is currently a professor at the University of Texas at Austin.

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Eiting, C.J., Grudowski, P.A. & Dupuis, R.D. The X-ray characterization of InGaN and AiGaN heterostructures for blue-light emitters. JOM 49, 27–30 (1997). https://doi.org/10.1007/BF02914347

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