Abstract
Blue light-emitting diodes (LEDs) have consistently increased in brightness as devices have evolved from the homojunction SiC device to the double heterojunction GaN-based LED on SiC substrates. These LEDs are used in a wide range of applications requiring blue, white, and/or a combination of colors. The technology to develop the nitride devices involves growing single-crystal thin films with compositions from AlN-InN-GaN via metalorganic chemical vapor deposition on single-crystal 6H-Sic substrates. In this study, AlGaN containing high and low fractions of aluminum was grown directly on the SiC for use as a buffer layer. Subsequent epitaxial layers of GaN and AlGaN were doped with magnesium and silicon to achieve p-type and n-type conductivity, respectively. N-type InGaN layers with indium compositions up to ∼50% were also achieved.
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References
S. Nakamura, “InGaN Light-Emitting Diodes with Quantum-Well Structures”,MRS Symp. Proc. Gallium Nitride and Related Materials, vol. 395, ed. F. Ponce et al. (Pittsburgh, PA: MRS, 1996), pp. 879–887.
M. Koike et al., “Light-Emitting Devices Based on GaN and Related Compound Semiconductors,”MRS Symp. Proc. Gallium Nitride and Related Materials, vol. 395, ed. F. Ponce et al. (Pittsburgh, PA: MRS, 1996), pp. 889–895.
H. Amano et al., “Growth and Luminescence Properties of Mg-Doped GaN Prepared by MOVPE”,J. Electrochem. Soc., 137 (1990), pp. 1639–1641.
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John Edmond earned his Ph.D. in materials engineering at North Carolina State University in 1987. He is currently the director of optoelectronics technology at Cree Research.
Jeffrey Lagaly earned his B.S.E.E. in solid state at the University of Cincinnati in 1990. He is currently a sales engineer at Cree Research.
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Edmond, J., Lagaly, J. Developing nitride-based blue LEDs on SiC substrates. JOM 49, 24–26 (1997). https://doi.org/10.1007/BF02914346
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DOI: https://doi.org/10.1007/BF02914346