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Kinetics of interaction of tantalum disilicide with tantalum and other metals

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Abstract

The rate of growth of Ta5Si3 in the Ta−TaSi2 system has been measured with good accuracy in the temperature range of 1150° to 1370°C (2100° to 2500°F) using couples consisting of dense wafers of the components. The isothermal growth is shown to be parabolic and the temperature dependence of the growth constant is given byk=5 exp (−77,000/RT) It has been shown that tantalum diffusion is negligible by comparison with silicon diffusion. The Ta5Si3 was found to exist in both tetragonal and hexagonal forms. A more limited investigation of silicon loss from TaSi2 to W, Mo, Nb, Zr, Ti, and Re indicates that none of these is superior to tantalum in limiting the degradation of the tantalum disilicide. In most instances a layer of composition M5Si3 forms on the metal side of the couple.

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Authors and Affiliations

  1. Pitney Bowes, Inc., Stamford, Conn.

    L. J. Schwartz (Research Scientist)

  2. Department of Chemical Engineering of The City College, New York, USA

    M. Kolodney (Professor) & R. A. Graff (Associate Professor)

Authors
  1. L. J. Schwartz
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  2. M. Kolodney
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  3. R. A. Graff
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Additional information

L. J. Schwartz, formerly Doctoral Student at The City College of The City University of New York, New York, N. Y.

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Schwartz, L.J., Kolodney, M. & Graff, R.A. Kinetics of interaction of tantalum disilicide with tantalum and other metals. Metall Trans 2, 1429–1432 (1971). https://doi.org/10.1007/BF02913371

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  • DOI: https://doi.org/10.1007/BF02913371

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