Abstract
The presence of inhomogeneous distribution of defects in GaAs wafers strongly limits the reproductivity of IC fabrication processes. In this paper, we report for the first time a Fourier Transformation Image Testing approach, called FTTT, for the two dimensional evaluation of the disorder in a wafer, as it appears in infrared transmission images. The fourier analysis of the cell struchture reveals a dominant statistical rectangular organization of the dislocations along 〈110〉 and 〈010〉 directions. The definitions of α and β in the paper are typical of the organization of the cells to evaluate quantitatively properties of IC materials.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. P. Fillard, Comptes Rendus de la Conférence, Karinzawl, France, July, 1984.
V. Milutinovic,Computer 19 (1986) 10, 235–240.
J. Bonnafé, et al., DRIP Symposium, Materials Sciences Monographs, No.31, Elsevier, ed. by J. P. Fillard, 1985, pp. 35–39
M. Kunt, Traitement Numerique des Signaux, Dunod, 1981, pp. 101–110.
Zhang Fugui, Thése de Doctorat, Universite des Sciences et Techniques du Languedoc, Montpellier, France, 1986, pp. 98–110.
C. G. Lendaris, G. L. Stanley,Proc. IEEE,58 (1970), 50–58.
J. Logowski, et al., Semi-insulating III–V Materials, Conf. Kah. nee ta, 1984, U.S.A., pp. 200–205.
M. P. Scott, DRIP Symposium, Materials Science Monographs, No. 31, Elsevier, ed. by J. P. Fillard, 1985, pp. 155–157.
M. Bonnet, et al., DRIP Symposium, Materials Science Monographs, No. 31, Elsevier, ed. by J. P. Fillard, 1985, pp. 44–49.
Author information
Authors and Affiliations
About this article
Cite this article
Fugui, Z. FFT image application to detection and analysis of the defects in GaAs materials. J. of Electron.(China) 6, 94–97 (1989). https://doi.org/10.1007/BF02893177
Issue Date:
DOI: https://doi.org/10.1007/BF02893177