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Photoluminescence from Si-based SiNxOy films

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Chinese Science Bulletin

Abstract

B+, C+, Si+, and As+ with dose of 5 × 1016 cm−2 were implanted into SiNxOy, films grown on crystalline silicon by plasma-enhanced chemical vapor deposition. The ion-implanted samples exhibit their photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C+-implanted SiNxOy, films show very intense photoluminescence at green-yellow color region.

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Authors and Affiliations

  1. State Key Laboratory of Surface Physics and T. D. Lee Physics Laboratory, Fudan University, 200433, Shanghai, China

    Liangsheng Liao, Zuhong Xiong, Shuai Yuan & Xiaoyuan Hou

  2. Physics Department, Changsha Electric Power University, 410077, Changsha, Hunan, China

    Xiaobing Liu

Authors
  1. Liangsheng Liao
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  2. Xiaobing Liu
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  3. Zuhong Xiong
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  4. Shuai Yuan
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  5. Xiaoyuan Hou
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Liao, L., Liu, X., Xiong, Z. et al. Photoluminescence from Si-based SiNxOy films. Chin. Sci. Bull. 43, 124–126 (1998). https://doi.org/10.1007/BF02883923

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  • DOI: https://doi.org/10.1007/BF02883923

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