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Cluster model calculation of N near K-edge energy-loss fine structures in hexagonal GaN crystal

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Abstract

A cluster model is used to calculate electron energy-loss fine structures in crystal. The multiple-scattering self-consistent-field method is employed in the calculation. Our theoretical results of N near K-edge energy loss fine structures in hexagonal GaN crystal are in good agreement with the experimental spectra. Future possible experiments in energy-filtered transmission electron microscopy (EFTEM) are discussed and proposed because our theoretical work can provide clear assignments for transmitted electrons with different energy losses.

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Correspondence to Shangpeng Gao.

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Gao, S., Zhang, W., Li, J. et al. Cluster model calculation of N near K-edge energy-loss fine structures in hexagonal GaN crystal. Sci. China Ser. A-Math. 44, 1602–1607 (2001). https://doi.org/10.1007/BF02880800

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  • DOI: https://doi.org/10.1007/BF02880800

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