Abstract
Calculation showed that under suitable conditions various kinds of bound states above the barrier of an oscillating rectangular potential do exist, and the observation of electronic bound states above a potential well in the AlInAs/GaInAs heterostructure can be understood from our quantum mechanical calculation.
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Liu, Y., Zeng, J. Model calculation of bound eigenstates above a potential well. Sci. China Ser. A-Math. 40, 868–871 (1997). https://doi.org/10.1007/BF02878927
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DOI: https://doi.org/10.1007/BF02878927