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Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals

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Abstract

Ce doped Bi12SiO20 single crystals were grown either on board of the Chinese Spacecraft-Shenzhou No.3 (SZ-3) or on the ground at the same conditions with the exception of microgravity. The surface morphology of crystals clearly showed significant differences between the space- and ground-grown portions. The space- and ground-grown crystals have been measured by X-ray rocking curve, Ce concentration distribution in growth direction, dislocation density, absorption spectrums. These results show that the compositional homogeneity and structural perfection of Ce doped crystal grown in space are obviously improved.

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Authors and Affiliations

  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China

    Y. F. Zhou, Z. L. Pan, Y. Liu, F. Ai, L. A. Tang & J. C. Wang

  2. Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China

    N. F. Chen

  3. Institute of High Energy Physics, Chinese Academy of Sciences, 100039, Beijing, China

    Y. Y. Huang & W. He

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  1. Y. F. Zhou
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  2. Z. L. Pan
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  4. F. Ai
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  9. J. C. Wang
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Correspondence to Y. F. Zhou.

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Zhou, Y.F., Pan, Z.L., Liu, Y. et al. Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals. Microgravity Sci. Technol 17, 3–7 (2005). https://doi.org/10.1007/BF02870968

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  • DOI: https://doi.org/10.1007/BF02870968

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