Abstract
Electrical conductivity and thermoelectric power of liquid-quenched Bi-Sb tapes with Sb concentration in the range 8 to 18 at.% are reported between 77K and room temperature. Analysis of the data shows that the total electrical conductivity of these tapes is determined by a temperature-independent component due to band conduction, and a strongly temperature-dependent part due to carrier transport across or through the defect states. These defect states which appear to originate from structural imperfections and disorders due to rapid cooling, are formed close to the mobility edge within a small energy range.
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Dey, T.K., Ghatak, S.K. Temperature dependence of electrical conductivity and thermoelectric power of Bi-Sb tapes prepared by liquid quenching. Pramana - J. Phys. 32, 161–166 (1989). https://doi.org/10.1007/BF02847020
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DOI: https://doi.org/10.1007/BF02847020
Keywords
- Bismuth-antimony alloy
- liquid quenching
- thermoelectric power
- electrical conductivity
- localized states
- thermally activated tunnelling