Abstract
Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.
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References
Aitchson R E 1954Aust. J. Appl. Sci. 5 10
Fraser D B and Cook H D 1972J. Electrochem. Soc. 119 1368
Hecq M, Dubois A and Van Cakenberghe J 1973C. R. Colloq. Int. Pulverisation Cathodique Ser. Suppl. 165 151
Molzen Walter W 1975J. Vac. Sci. Technol. 12 99
Muller H K 1968Phys. Status Solidi 27 723
Radhakrishna M C and Ramakrishna Rao M 1973 Tech. Rep.
Rupprecht G 1954Fur. Phys. 139 504
Valdes L B 1954Proc. IRE 42 420
Vossen J L 1971R.C.A. Rev 32 289
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Radhakrishna, M.C., Rao, M.R. Some properties of indium-tin oxide films. Pramana - J Phys 9, 1–6 (1977). https://doi.org/10.1007/BF02845926
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DOI: https://doi.org/10.1007/BF02845926