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Thermal quenching of luminescence in erbium doped semiconductors

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Abstract

The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58–100 meV, characteristic of a localized energy barrier at the Er+ centre while the higher activation energy is approximately 0.8E g attributed to an Auger non-radiative process of carrier excitation into bands. This model has been found to describe the observed temperature dependences with reasonably good agreement.

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References

  1. P N Favennec, H D’Haridon, A Le Corre and M Salvi,Electron. Lett. 23, 684 (1987)

    Article  Google Scholar 

  2. H Ennen, J Schneider, G Pomrenke and A Axmann,Appl. Phys. Lett. 43, 943 (1983)

    Article  ADS  Google Scholar 

  3. W T Tsang and R A Logan,Appl. Phys. Lett. 49, 1686 (1986)

    Article  ADS  Google Scholar 

  4. G Pomrenke, H Ennen and W H Haydl,J. Appl. Phys. 59, 610 (1986)

    Article  ADS  Google Scholar 

  5. C Rochalx, A Rolland, P N Favennec, B Lambert, A Le Corre, H D’Haridon and M Salvi,Jap. J. Appl. Phys. 27, L2348 (1988)

    Google Scholar 

  6. P S Whitney, K Uwai, H Nakagome and K Takahei,Appl. Phys. Lett. 17, 351 (1988)

    Google Scholar 

  7. P S Whitney, K Uwai, H Nakagome and K Takahei,Appl. Phys. Lett. 53, 2074 (1988)

    Article  ADS  Google Scholar 

  8. D Seghier, T Benyattou, G Bremond, F Dueroqnet, J Gregoire, G Guillot, C Lhomer, B Lambert, Y Toudic and A Le Corre,Appl. Phys. Lett. 60, 983 (1992)

    Article  ADS  Google Scholar 

  9. B Lambert, A Le Corre, Y Toudic, C Lhomer, G Grandpierre and M Gauneau,J. Phys. Condens. Matter. 2, 479 (1992)

    Article  ADS  Google Scholar 

  10. J E Colon, D W Elsaesser, Y K Yeo, R L Hengehold and G S Pomrenke,Math. Sci. Forum,83–87, 671 (1992)

    Article  Google Scholar 

  11. Y Le Guillou,Electron. Lett. 25, 718 (1989)

    Article  Google Scholar 

  12. H J Lozykowski,Phys. Rev. B48, 17758 (1993)

    ADS  Google Scholar 

  13. H J Lozykowski, A K Alshawa, G S Pomrenke and I Brown inRare earth doped semiconductors edited by G S Pomrenke, P B Klein, and D W Langer, MRS Symposia Proceedings (Materials Research Society, Pittsburg, 1993) vol. 301, 263

    Google Scholar 

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Authors and Affiliations

  1. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, 721 302, Kharagpur, India

    B Chanda & D N Bose

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  1. B Chanda
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  2. D N Bose
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Chanda, B., Bose, D.N. Thermal quenching of luminescence in erbium doped semiconductors. Pramana - J Phys 48, 1145–1149 (1997). https://doi.org/10.1007/BF02845889

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  • DOI: https://doi.org/10.1007/BF02845889

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