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Microstructural probing of (1−x) GeS2−x Ga2S3 system glasses by Raman scattering

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Abstract

Raman scattering measurement of (1−x) GeS2−x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3. According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced: the gradual enhancement of ethane-like structural units S3Ge−GeS3 (250 cm−1) and S3 Ga−GaS3 (270 cm−1) and the appearance of charge ambalanced units [Ga2S2(S1/2)4]2− and [Ga(S1/2)4]− And this change of structural aspect seems to give us a clue to understanding the cause of the increased rare-earth solubility.

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Authors and Affiliations

  1. Key Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology, Ministry of Education, 430070, Wuhan, China

    Tao Haizheng (Assoc. Prof), Zhao Xiujian, Jing Chengbin & Liu Sheng

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  1. Tao Haizheng
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  2. Zhao Xiujian
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  3. Jing Chengbin
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  4. Liu Sheng
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Correspondence to Tao Haizheng.

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Funded by the National Natural Science Foundation of China (No. 50125205), Scientific Research Foundation of Wuhan University of Technology and the Opening Fund of Key Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology, Ministry of Education (No. SYSJJ2004-14)

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Haizheng, T., Xiujian, Z., Chengbin, J. et al. Microstructural probing of (1−x) GeS2−x Ga2S3 system glasses by Raman scattering. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 20, 8–10 (2005). https://doi.org/10.1007/BF02835014

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  • DOI: https://doi.org/10.1007/BF02835014

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