Abstract
Room temperature irradiation effect of GaAs compound semiconductor by 100 keV Ar+ ions has been systematically studied by means of transmission electron microscopy. The dose dependenceoof the Ar+ ion irradiation and room temperature annealing effects have been investigated. The experimental results show that the structure of GaAs transforms from perfect crystalline through weakly and severely damaged crystalline to amorphous states with the increase of the irradiation dose and the damaged states are changed during room temperature annealing.
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Sadana D K, Sands T, Washburn J. High resolution transmission electron microscopy study of Se+-implanted and annealed GaAs: Mechanisms of amorphization and recrystallization.Appl Phys Lett, 1984,44: 623
Wang K W, Spitzer W G, Hubler G K,et al. Ion implantation of Si by12C,29Si, and120Sn: Amorphization and annealing effect.J Appl Phys, 1985,58: 4553.
Schork R, Pichler P, Kluge A,et al. Radiation-enhanced diffusion during high-temperature ion implantation.Nucl Instr and Meth, 1991, B59/60:499
Alberts H W, Gaigher H L, Bredell L J. Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with Pb.Nucl Instr and Meth, 1993, B80/81:519.
Sadana D K. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors.Nucl Instr and Meth, 1985, B7/8:375.
Kudo K, Makita Y, Oyanagi H,et al. Local structure of heavily Zn+-implanted GaAs studied by photoluminescence and fluorescence EXAFS.Nucl Instr and Meth, 1987, B19/20:398
Wesch W, Wendler E, Gotz G,et al. Defect production during ion implantation of various AI BV semiconductors.J Appl Phys, 198965:519.
Vetrano J S, Bench M W, Robertson I M,et al. In-situ studies of ion irradiation effects in an electron microscope.Metallurg Trans, 1989, A20:2673.
Jencic I, Bench M W, Robertson I M,et al. Comparison of the amorphization induced in Al x Ga1-x As and GaAs by heavy-ion irradiation.J Appl Phys, 1991.,69:1287
Bench M W, Robertson I M, Kirk M A. Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaP.Nucl Instr and Meth, 1991, B59/60:372
Ivey D G, Piercy G R. Electron microscopy specimens prepared by ion milling.Thin Solid Films, 1987,149:73
Shahid M A, Sealy B J. The residual microstructure of ion-implanted semi-insulating GaAs.Radiation Effects, 1986,97:147
Wendler E, Wesch W, Gotz G. Defects in weakly damaged ion-implanted GaAs and other III–V semiconductors.Phys Stat Sol(a), 1989,112:289
Bench M W, Tappin D K, Robertson I M. On the suitability of the down-zone imaging technique to the study of radiation damage.Phil Mag Lett, 1992,66:39
Edington J WPractical Electron Microscopy in Materials Science, Vol.3, London: McMillan Press, 1975
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Yang Xiangxiu: born in 1968, Doctor
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Xiangxiu, Y., Renhui, W., Heping, Y. et al. Transmission electron microscopy investigation of the Ar+ ion irradiation effect in semiconductor GaAs. Wuhan Univ. J. Nat. Sci. 3, 35–40 (1998). https://doi.org/10.1007/BF02827510
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DOI: https://doi.org/10.1007/BF02827510