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New chemical methods for the deposition of Cu1·8S and TlSe thin film

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Abstract

New chemical methods for the deposition of thin film of Cu1·8S and TlSe have been developed. The deposition of Cu1·8S thin film has been performed by thiourea, ammonia and Cu2+ ions at room temperature, while TlSe thin films are obtained from triethanolamine as complexing agent, ammonia, sodium selenosulphate solution and Tl1+ ions at room temperature. The electrical resistance, mobility, carrier concentration and optical band gap have been measured.

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Authors and Affiliations

  1. Department of Chemistry, Indian Institute of Technology, 721 302, Kharagpur, India

    R N Bhattacharya & P Pramanik

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  1. R N Bhattacharya
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  2. P Pramanik
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Bhattacharya, R.N., Pramanik, P. New chemical methods for the deposition of Cu1·8S and TlSe thin film. Bull. Mater. Sci. 3, 403–408 (1981). https://doi.org/10.1007/BF02819023

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  • DOI: https://doi.org/10.1007/BF02819023

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