Abstract
The low frequency 1/f noise charge found in Hg1-xCdxTe integrating metal-insulator-semiconductor (MIS) devices operating at 40K and low bias above threshold is found to be independent of integration time. The signal theory of random processes is utilized to demonstrate that 1/f noise charge resulting from carrier number fluctuations due to insulator traps should not depend on integration time, while 1/f noise charge resulting from 1/f noise in any current filling the MIS well should be proportional to integration time. This distinction allows for the determination of effective insulator trap densities from low temperature 1/f noise data on simple MIS structures. The technique is applied to a number of n-channel and p-channel devices and the effective trap densities in ZnS are determined.
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Meléndez, J.L., Beck, J. The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devices. J. Electron. Mater. 22, 993–998 (1993). https://doi.org/10.1007/BF02817515
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DOI: https://doi.org/10.1007/BF02817515