Abstract
Hexamethyldisilazane (HMDS) has been used as an organosilicon source for the deposition of dielectric films at low temperatures (200-250° C) by microwave plasma enhanced CVD technique. Hydrogenated films of variable composition of silicon carbonitride, silicon oxynitride and silicon dioxide have been deposited by decomposition of HMDS in the presence of additive gases like NH3, O2 and H2 under different process conditions. Deposited films have been characterized by the measurement of refractive index and buffered HF etch rate, and by the analysis of XPS and infrared transmission spectra. An increase in HMDS partial pressure generally results in the decrease of refractive index. The films show stable C-V characteristics of metal-insulator-semicon-ductor (MIS) capacitors with positive insulator charge density.
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Ray, S.K., Maiti, C.K. & Chakrabarti, N.B. Low-Temperature deposition of dielectric films by microwave plasma enhanced decomposition of hexamethyldisilazane. J. Electron. Mater. 20, 907–913 (1991). https://doi.org/10.1007/BF02816031
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DOI: https://doi.org/10.1007/BF02816031