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Aluminum metallization and contacts for integrated circuits

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Abstract

Aluminum metallization for silicon devices and integrated circuits is discussed. The single metallization process is treated for alloying temperatures from 350° to 620°C. Problems associated with interconnecting metal and the contact step are mentioned briefly, but the main emphasis is on alloying itself. Metal migration beneath the oxide is shown and examined as to cause, extent, and variation with various parameters. The defects which are responsible for this penetration have a density which varies with contact area. A hypothesis is proposed which relates these defects to interface states because of their density and behavior under various conditions. Conclusions are drawn with regard to acceptable and improved contacting procedures.

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Authors and Affiliations

  1. Rome Air Development Center, Griffiss Air Force Base, N. Y.

    Clyde H. Lane (Physicist)

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  1. Clyde H. Lane
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Lane, C.H. Aluminum metallization and contacts for integrated circuits. Metall Trans 1, 713–724 (1970). https://doi.org/10.1007/BF02811599

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