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Dislocation mobility in heavily doped silicon single crystals

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Abstract

Dislocation mobility has been studied in heavily doped silicon single crystals by kilohertz internal friction measurements. The dopant effect on dislocation mobility previously reported in germanium and silicon under plastic deformation has now been seen in silicon under the influence of much lower applied stresses. The low strains and only moderately elevated temperatures used in the present investigation allow the dislocations to oscillate only slightly about their equilibrium positions. The results from the slight dislocation excursions have led to a unified kink model of dislocation damping in silicon. The dopant effect on dislocation mobility is attributed directly to the surplus electronic carriers in the immediate vicinity of the dislocation kink. The intrinsic carrier concentration in the local vicinity of the dislocation has been found to be 100 times greater than the corresponding bulk value.

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Authors and Affiliations

  1. Texas instruments, Dallas, Tex.

    A. D. Paddock (Member Technical Staff)

  2. University of Denver, Denver, CO, USA

    S. H. Carpenter (Associate Professor, Physics and Metallurgy)

Authors
  1. A. D. Paddock
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  2. S. H. Carpenter
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A. D. PADDOCK, formerly of the Department of Metallurgy, University of Denver, Denver, Col.

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Paddock, A.D., Carpenter, S.H. Dislocation mobility in heavily doped silicon single crystals. Metall Trans 1, 651–658 (1970). https://doi.org/10.1007/BF02811592

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